MasterGaN1 ST
| Available |
MasterGaN1 ST
- 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
- QFN 9 x 9 x 1 mm package
- RDS(ON) = 150 mΩ
- IDS(MAX) = 10 A
- Reverse current capability
- Zero reverse recovery loss
- UVLO protection on low-side and high-side
- Internal bootstrap diode
- Interlocking function
- Dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3 V to 15 V compatible inputs with hysteresis and pull-down
- Overtemperature protection
- Bill of material reduction
- Very compact and simplified layout
- Flexible, easy and fast design.
Please make sure your contact information is correct. Your message will be sent directly to the recipient(s) and will not be publicly displayed. We will never distribute or sell your personal information to third parties without your express permission.
