IMBG65R048M1H Infineon

IMBG65R048M1H Infineon
IMBG65R048M1H INFINEON
IMBG65R048M1H INFINEON
IMBG65R048M1H INFINEON
IMBG65R048M1H INFINEON

IMBG65R048M1H INFINEON

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IMBG65R048M1H     INFINEON

•Optimizedswitchingbehaviorathighercurrents
•CommutationrobustfastbodydiodewithlowQf
•Superiorgateoxidereliability
•Tj,max=175°Candexcellentthermalbehavior
•LowerRDS(on)andpulsecurrentdependencyontemperature
•Increasedavalanchecapability
•Compatiblewithstandarddrivers(recommendeddrivingvoltage:0V-18V)
•Kelvinsourceprovidesupto4timeslowerswitchinglosses

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